Inducing tunable switching behavior in a single memristor-Reference-Cited by-同舟云学术

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Inducing tunable switching behavior in a single memristor

Published:2018-06 Issue: Volume:11 Page:280-290
ISSN:2352-9407
Container-title:Applied Materials Today
language:en
Short-container-title:Applied Materials Today

Author:

Ahmed Taimur,Walia Sumeet,Mayes Edwin L.H.,Ramanathan Rajesh,Guagliardo Paul,Bansal Vipul,Bhaskaran Madhu,Yang J. Joshua,Sriram Sharath

Funder

Australian Research Council

Publisher

Elsevier BV

Subject

General Materials Science

Reference73 articles.

1. Redox-based resistive switching memories – nanoionic mechanisms, prospects, and challenges;Waser;Adv. Mater.,2009

2. Nanoionics-based resistive switching memories;Waser;Nat. Mater.,2007

3. Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing;Wang;Nat. Mater.,2017

4. Memristive devices for computing;Yang;Nat. Nanotechnol.,2013

5. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures;Lee;Nat. Mater.,2011

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