A high-speed MIM resistive memory cell with an inherent vanadium selector-Reference-Cited by-同舟云学术

A high-speed MIM resistive memory cell with an inherent vanadium selector

Published:2020-12 Issue: Volume:21 Page:100848
ISSN:2352-9407
Container-title:Applied Materials Today
language:en
Short-container-title:Applied Materials Today

Author:

Lin Chih-Yang,Tseng Yi-Ting,Chen Po-Hsun,Chang Ting-Chang,Eshraghian Jason K.,Wang Qiwen,Lin Qi,Tan Yung-Fang,Tai Mao-Chou,Hung Wei-Chun,Huang Hui-Chun,Lu Wei D.,Sze Simon M.

Funder

Ministry of Science and Technology Core Facilities Laboratory for Nano-Science and Nano-Technology in Kaohsiung-Pingtung

Center for Nanoscience and Nanotechnology

National Sun Yat-Sen University and

National Sun Yat-Sen University

Ministry of Science and Technology, Taiwan

Publisher

Elsevier BV

Subject

General Materials Science

Reference60 articles.

1. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

2. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

3. Resistance random access memory

4. Multiferroics: progress and prospects in thin films

5. Phase Change Memory

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