Optimization of perpendicular anisotropy of Ta-inserted double CoFeB/MgO interface MTJ’s for STT-MRAM-Reference-Cited by-同舟云学术

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Optimization of perpendicular anisotropy of Ta-inserted double CoFeB/MgO interface MTJ’s for STT-MRAM

Published:2016-01 Issue: Volume:398 Page:54-58
ISSN:0304-8853
Container-title:Journal of Magnetism and Magnetic Materials
language:en
Short-container-title:Journal of Magnetism and Magnetic Materials

Author:

Clark Billy D.,Paul Soumalya,Schwarm Samuel C.,Singh Amritpal,Natarajarathinam Anusha,Gupta Subhadra

Funder

National Science Foundation

Designing Materials to Revolutionize and Engineer our Future (DMREF)

NSF CAREER

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM);Apalkov;ACM J. Emerg. Technol. Comput. Syst.,2013

2. Spin torque switching of perpendicular Ta|CoFeB|MgO-based magnetic tunnel junctions;Worledge;Appl. Phys. Lett.,2011

3. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction;Ikeda;Nat. Mater.,2010

4. Perpendicular-anisotropy CoFeB–MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure;Sato;Appl. Phys. Lett.,2012

5. MgO/CoFeB/Ta/CoFeB/MgO recording structure in magnetic tunnel junctions with perpendicular easy axis;Sato;IEEE Trans. Magn.,2013

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