High-resolution photoemission study of the hybridization gap in the Kondo semiconductor CeRhAs-Reference-Cited by-同舟云学术

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High-resolution photoemission study of the hybridization gap in the Kondo semiconductor CeRhAs

Published:2007-03 Issue:2 Volume:310 Page:e57-e58
ISSN:0304-8853
Container-title:Journal of Magnetism and Magnetic Materials
language:en
Short-container-title:Journal of Magnetism and Magnetic Materials

Author:

Shimada K.,Higashiguchi M.,Arita M.,Namatame H.,Taniguchi M.,Fujimori S.-i.,Saitoh Y.,Fujimori A.,Takata Y.,Shin S.,Kobayashi K.,Ikenaga E.,Yabashi M.,Tamasaku K.,Nishino Y.,Miwa D.,Ishikawa T.,Sasakawa T.,Takabatake T.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Ce- and Yb-based Kondo semiconductors

2. Gap formation in single-crystal CeRhSb

3. Localization effects of kondo semimetals CeNiSn and CeRhSb

4. Successive phase transitions and energy-gap formation in CeRhAs

5. Crystal structure of ternary CeRhX compounds, X=As, Sb, Bi

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Studies of electronic structure across a quantum phase transition in CeRhSb1−xSnx;The European Physical Journal B;2019-09

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