Localization effects of kondo semimetals CeNiSn and CeRhSb-Reference-Cited by-同舟云学术

Localization effects of kondo semimetals CeNiSn and CeRhSb

Published:1996-06 Issue: Volume:223-224 Page:413-420
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Takabatake T,Nakamoto G,Yoshino T,Fujii H,Izawa K,Nishigori S,Goshima H,Suzuki T,Fujita T,Maezawa K,Hiraoka T,Okayama Y,Oguro I,Menovsky A.A,Neumaier K,Brückl A,Andres K

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Optimization of High-Efficiencyn+-p-p+Back-Surface-Field Silicon Solar Cells

2. Evidence of pseudogap formation in a new valence-fluctuating compound: CeRhSb

3. Effect of impurity phases on the anisotropic transport properties of CeNiSn

4. Crystal Growth and Characterization of the Kondo Semimetal CeNiSn

5. Anisotropic physical properties of the Kondo semiconductor CeRhSb

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