Effect of pulsed laser annealing on the properties of (Ga,Mn)As layers-Reference-Cited by-同舟云学术

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Effect of pulsed laser annealing on the properties of (Ga,Mn)As layers

Published:2022-08 Issue: Volume:556 Page:169360
ISSN:0304-8853
Container-title:Journal of Magnetism and Magnetic Materials
language:en
Short-container-title:Journal of Magnetism and Magnetic Materials

Author:

Kalentyeva I.L.,Vikhrova O.V.,Danilov Yu.A.,Dorokhin M.V.,Zvonkov B.N.,Kuznetsov Yu.M.,Kudrin A.V.,Khomitsky D.V.,Parafin A.E.,Yunin P.A.,Danilov D.V.

Funder

Ministry of Science and Higher Education of the Russian Federation

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Intrinsically limited critical temperatures of highly doped Ga1−xMnxAs thin films;Khazen;Phys. Rev. B.,2010

2. Zener model description of ferromagnetism in zinc-blende magnetic semiconductors;Dietl;Science,2000

3. Growth and properties of (Ga, Mn)As films with high Mn concentration;Takamura;J. Appl. Phys.,2001

4. Ferromagnetism in (In, Mn)As alloy thin films grown by metalorganic vapor phase epitaxy;Blattner;Appl. Surf. Sci.,2004

5. Characterization of InMnSb epitaxial films for spintronics;Lari;J. Phys. Conf. Ser.,2012

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