Resistive switching and its modulating ferromagnetism and magnetoresistance of a ZnO-Co/SiO2-Co film-Reference-Cited by-同舟云学术

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Resistive switching and its modulating ferromagnetism and magnetoresistance of a ZnO-Co/SiO2-Co film

Published:2019-11 Issue: Volume:489 Page:165445
ISSN:0304-8853
Container-title:Journal of Magnetism and Magnetic Materials
language:en
Short-container-title:Journal of Magnetism and Magnetic Materials

Author:

Du Fanfan,Li Yanchun,Li Xiaoli,Yang Jie,Bai Yuhao,Quan Zhiyong,Liu Chunli,Xu Xiaohong

Funder

National Science Foundation of China

Project of Returness Scholarship

Fund Program

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions

2. A 1D Vanadium Dioxide Nanochannel Constructed via Electric-Field-Induced Ion Transport and its Superior Metal-Insulator Transition

3. Nanoionics-based resistive switching memories

4. Electric Field-Induced Modification of Magnetism in Thin-Film Ferromagnets

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sputtering pressure dependence of microstructure and magnetoresistance properties of non-uniform Co–ZnO nanocomposite film;Journal of Magnetism and Magnetic Materials;2024-03

2. Magnetoresistance anomaly during the electrical triggering of a metal-insulator transition;Physical Review B;2023-11-20

3. Memory Effects in Nanolaminates of Hafnium and Iron Oxide Films Structured by Atomic Layer Deposition;Nanomaterials;2022-07-28

4. Electric field manipulation of nonvolatile magnetization in MgO-based memory device with resistive switching effect;Chemical Physics Letters;2022-07

5. Effect of nonuniform microstructure on magnetoresistance and field sensitivity in Co–MgO nanocomposite films;Vacuum;2022-06

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