Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions-Reference-Cited by-同舟云学术

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Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions

Published:2015 Issue:14 Volume:7 Page:6334-6339
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Zhang Kun¹²³⁴,Cao Yan-ling¹²³⁴,Fang Yue-wen⁵⁶⁷⁸,Li Qiang¹²³⁴,Zhang Jie¹²³⁴,Duan Chun-gang⁵⁶⁷⁸,Yan Shi-shen¹²³⁴,Tian Yu-feng¹²³⁴,Huang Rong⁵⁶⁷⁸,Zheng Rong-kun⁹¹⁰¹¹^ORCID,Kang Shi-shou¹²³⁴,Chen Yan-xue¹²³⁴,Liu Guo-lei¹²³⁴,Mei Liang-mo¹²³⁴

Affiliation:

1. School of Physics

2. State Key Laboratory of Crystal Materials

3. Shandong University

4. Jinan, P. R. China

5. Key Laboratory of Polar Materials and Devices

6. Ministry of Education

7. East China Normal University

8. Shanghai, P. R. China

9. Australian Center for Microscopy & Microanalysis

10. University of Sydney

11. Sydney, Australia

Abstract

Electric-field control of magnetic and transport properties of magnetic tunnel junctions has been demonstrated.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2015/NR/C5NR00522A

Reference32 articles.

1. Nanoionics-based resistive switching memories

2. Electric-field-assisted switching in magnetic tunnel junctions

3. Surface Magnetoelectric Effect in Ferromagnetic Metal Films

4. Electric Field-Induced Modification of Magnetism in Thin-Film Ferromagnets

5. Large voltage-induced magnetic anisotropy change in a few atomic layers of iron

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