Fabrication of fully epitaxial magnetic tunnel junctions with a Co2MnSi thin film and a MgO tunnel barrier
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. New Class of Materials: Half-Metallic Ferromagnets
2. Large Tunneling Magnetoresistance at Room Temperature Using a Heusler Alloy with the B2 Structure
3. Co2MnSi Heusler alloy as magnetic electrodes in magnetic tunnel junctions
4. Fabrication of Fully Epitaxial Magnetic Tunnel Junctions Using Full-Heusler Alloy Co2Cr0.6Fe0.4Al Thin Film and MgO Tunnel Barrier
5. Epitaxial growth of Heusler alloy thin films on MgO (001) substrates by magnetron sputtering
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1. Methods to induce perpendicular magnetic anisotropy in full-Heusler Co2FeSi thin layers in a magnetic tunnel junction structure;AIP Advances;2018-05
2. Ultrasensitive transverse magneto-optical Kerr effect measurements by means of effective polarization change detection;Journal of Physics D: Applied Physics;2017-05-17
3. Formation of Fe-Co-Si Structure in Fe and Co Implanted Si Substrate;MRS Advances;2017-03-23
4. Fabrication and characterization of spin injector using a high-quality B2-ordered-Co2FeSi0.5Al0.5/MgO/Si(100) tunnel contact;J APPL PHYS;2015
5. Full-Heusler Co2FeSi alloy thin films with perpendicular magnetic anisotropy induced by MgO-interfaces;Journal of Applied Physics;2014-05-07
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