Methods to induce perpendicular magnetic anisotropy in full-Heusler Co2FeSi thin layers in a magnetic tunnel junction structure
Author:
Affiliation:
1. Electrical and Electronics Engineering, School of Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152–8552, Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5007436
Reference24 articles.
1. L10-ordered high coercivity (FePt)Ag–C granular thin films for perpendicular recording
2. Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory
3. Spin-torque oscillator using a perpendicular polarizer and a planar free layer
4. Tunneling magnetoresistance of magnetic tunnel junctions using perpendicular magnetization L10-CoPt electrodes
5. Tunnel Magnetoresistance Over 100% in MgO-Based Magnetic Tunnel Junction Films With Perpendicular Magnetic L1$_{0}$-FePt Electrodes
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1. Investigation of perpendicular magnetic anisotropy in Pd/Co2FeSi/MgO structures with evaluations of magnetic property, crystal structure, and elemental mapping;Journal of Magnetism and Magnetic Materials;2022-11
2. Interfacial perpendicular magnetic anisotropy in Co2FeSi alloy films sandwiched by Pt and MgAl2O4;Journal of Magnetism and Magnetic Materials;2022-10
3. Longitudinal fluctuations of Co spin moments and their impact on the Curie temperature of the Heusler alloy Co2FeSi;Journal of Magnetism and Magnetic Materials;2022-10
4. Design and fabrication of Co2FeSi/Pt multilayers with perpendicular magnetic anisotropy;Journal of Magnetism and Magnetic Materials;2022-06
5. Longitudinal Fluctuations of Co Spin Moments and Their Impact on the Curie Temperature of the Heusler Alloy Co2fesi;SSRN Electronic Journal;2022
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