Nitride-based photodetectors with unactivated Mg-doped GaN cap layer-Reference-Cited by-同舟云学术

Nitride-based photodetectors with unactivated Mg-doped GaN cap layer

Published:2008-05 Issue:2 Volume:143 Page:191-195
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Lam K.T.,Chang P.C.,Chang S.J.,Yu C.L.,Lin Y.C.,Sun Y.X.,Chen C.H.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference25 articles.

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3. Nitride-based light-emitting diodes with p-AlInGaN surface layers;Kuo;IEEE Trans. Electron Devices,2005

4. Nitride-based LEDs with modulation doped Al0.12Ga0.88N/GaN superlattice structures;Wen;IEEE Trans. Electron Devices,2004

5. Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors;Tan;Appl. Phys. Lett.,2002

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