Photofield effect and photoresponse properties of the transparent oxide-based BaInZnO thin-film transistors-Reference-Cited by-同舟云学术

Photofield effect and photoresponse properties of the transparent oxide-based BaInZnO thin-film transistors

Published:2013-04 Issue: Volume:193 Page:1-12
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Kim Si Joon,Gunduz Bayram,Yoon Doo Hyun,Kim Hyun Jae,Al-Ghamdi Ahmed A.,Yakuphanoglu F.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference94 articles.

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4. Reversible and irreversible trapping at room temperature in poly(thiophene) thin-film transistors;Salleo;Applied Physics Letters,2005

5. Effect of annealing temperature on optical band-gap of amorphous indium zinc oxide film;Jeon;Journal of Alloys and Compounds,2011

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