AlN/GaN/Sapphire heterostructure for high-temperature packageless acoustic wave devices-Reference-Cited by-同舟云学术

AlN/GaN/Sapphire heterostructure for high-temperature packageless acoustic wave devices

Published:2018-11 Issue: Volume:283 Page:9-16
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Bartoli F.^ORCID,Aubert T.,Moutaouekkil M.,Streque J.,Pigeat P.,Zhgoon S.^ORCID,Talbi A.,Hage-Ali S.,M’Jahed H.,Elmazria O.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

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5. A numerical method to derive accurate temperature coefficients of material constants from high-temperature SAW measurements: application to langasite;Nicolay;IEEE Trans. Ultrason. Ferroelectr. Freq. Control,2013

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