High-Performance Acoustic Wave Devices on LiTaO3/SiC Hetero-Substrates
Author:
Affiliation:
1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China
2. School of Science, Harbin Institute of Technology, Shenzhen, China
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Radiation
Link
http://xplorestaging.ieee.org/ielx7/22/10273174/10113763.pdf?arnumber=10113763
Reference59 articles.
1. AlN/3C-SiC Composite Plate Enabling High-Frequency and High-Q Micromechanical Resonators
2. Demands of highly piezoelectric materials for radio frequency acoustic wave devices
3. Flexible and Transparent Aluminum‐Nitride‐Based Surface‐Acoustic‐Wave Device on Polymeric Polyethylene Naphthalate
4. Interconnect-free parallel logic circuits in a single mechanical resonator
5. Surface acoustic wave photonic devices in silicon on insulator
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