Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages-Reference-Cited by-同舟云学术

Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages

Published:2011-04 Issue:2 Volume:166 Page:177-186
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Brown J.J.,Baca A.I.,Bertness K.A.,Dikin D.A.,Ruoff R.S.,Bright V.M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference37 articles.

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3. Realization of reliable GaN nanowire transistors utilizing dielectrophoretic alignment technique;Motayed;J. Appl. Phys.,2006

4. Strained gallium nitride nanowires;Seo;J. Chem. Phys.,2002

5. Spontaneously grown GaN and AlGaN nanowires;Bertness;J. Cryst. Growth,2006

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