Study of the TiSi interface formed by Ti deposition on a clean Si (100) surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference36 articles.
1. Metal Silicides in CMOS Technology: Past, Present, and Future Trends
2. Silicide thin films and their applications in microelectronics
3. Development of the self-aligned titanium silicide process for VLSI applications
4. Reactive adsorption and diffusion of Ti on Si(001) by scanning tunneling microscopy
5. The room temperature growth of Ti on sputter-cleaned Si(100): Composition and nanostructure of the interface
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Periodic DFT study of Ti deposition on defective Si(100) surfaces;Applied Surface Science;2015-04
2. First principles investigation of Ti adsorption and migration on Si(100) surfaces;Journal of Applied Physics;2013-12-28
3. Role of the Si–Si bond stability in the first stages of Ti diffusion on a Si(111) 2×1 surface. A periodic DFT study;Applied Surface Science;2013-05
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