Substrate orientation: A way towards higher quality monolayer graphene growth on 6H-SiC(0001)-Reference-Cited by-同舟云学术

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Substrate orientation: A way towards higher quality monolayer graphene growth on 6H-SiC(0001)

Published:2009-08 Issue:15 Volume:603 Page:L87-L90
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Virojanadara C.,Yakimova R.,Osiecki J.R.,Syväjärvi M.,Uhrberg R.I.G.,Johansson L.I.,Zakharov A.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference13 articles.

1. Two-dimensional gas of massless Dirac fermions in graphene

2. Experimental observation of the quantum Hall effect and Berry's phase in graphene

3. Unconventional quantum Hall effect and Berry’s phase of 2π in bilayer graphene

4. Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-based Nanoelectronics

5. The growth and morphology of epitaxial multilayer graphene

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