GaAs(001) (2×4) to c(4×4) transformation observed in situ by STM during As flux irradiation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference21 articles.
1. Reconstruction and defect structure of vicinal GaAs(001) and AlxGa1−xAs(001) surfaces during MBE growth
2. Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy
3. Structures of As-Rich GaAs(001)-(2 × 4) Reconstructions
4. A combined molecular‐beam epitaxy and scanning tunneling microscopy system
5. Effects of surface reconstruction on III–V semiconductor interface formation: The role of III/V composition
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Interaction of Mn with GaAs and InSb: incorporation, surface reconstruction and nano-cluster formation;Journal of Physics: Condensed Matter;2014-09-05
2. Dynamic grazing incidence fast atom diffraction during molecular beam epitaxial growth of GaAs;Applied Physics Letters;2014-07-14
3. InAs/GaAs(001) wetting layer formation observed in situ by concurrent MBE and STM;Surface Science;2009-12
4. As-rich reconstruction stability observed by high temperature scanning tunnelling microscopy;Journal of Crystal Growth;2009-10
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