Arrays of widely spaced atomic steps on Si(111) mesas due to sublimation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference24 articles.
1. Fabrication of arrays of large step‐free regions on Si(001)
2. Ultra-Large-Scale Step-Free Terraces Formed at the Bottom of Craters on Vicinal Si(111) Surfaces
3. Formation and stability of large step-free areas on Si(001) and Si(111)
4. Growth of step-free surfaces on device-size (0001)SiC mesas
5. A Simple Model for the Formation of Step-Free Surfaces
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1. Evolution of Micropits on Large Terraces of the Si(111) Surface during High-Temperature Annealing;Semiconductors;2019-04
2. Synthesis of pans and mesas using a beam of self-ions;Journal of Physics: Condensed Matter;2008-08-19
3. Surface gate and contact alignment for buried, atomically precise scanning tunneling microscopy–patterned devices;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2007
4. Early morphological changes on Si(111) surfaces during UHV processing;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2007
5. Using atomic steps to induce texture in polycrystalline pentacene films;Applied Physics Letters;2006-12-18
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