Growth of Ge islands on SrTiO3 (001) 2×1 reconstructed surface: Epitaxial relationship and effect of the temperature-Reference-Cited by-同舟云学术

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Growth of Ge islands on SrTiO3 (001) 2×1 reconstructed surface: Epitaxial relationship and effect of the temperature

Published:2014-06 Issue: Volume:624 Page:130-134
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Gobaut B.,Penuelas J.,Benamrouche A.,Robach Y.,Blanc N.,Favre-Nicolin V.,Renaud G.,Largeau L.,Saint-Girons G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference24 articles.

1. Germanium silicon: physics and materials: optoelectronics in silicon and germanium silicon;Campbell,1999

2. The evolution of electroluminescence in Ge quantum-dot diodes with the fold number

3. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)

4. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)

5. Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Texture of Ge on SrTiO 3 (001) substrates: Evidence for in-plane axiotaxy;Surface Science;2016-02

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