Core level photoemission and STM characterization of Ta/Si(111)-7×7 interfaces-Reference-Cited by-同舟云学术

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Core level photoemission and STM characterization of Ta/Si(111)-7×7 interfaces

Published:2009-02 Issue:3 Volume:603 Page:469-476
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Shukrynau P.,Dudr V.,Švec M.,Vondráček M.,Mutombo P.,Skála T.,Šutara F.,Matolín V.,Prince K.C.,Cháb V.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference24 articles.

1. Mechanical Behavior of Pressure-Cast Al2O3/NiAlFe Composites

2. Phase formation in Cu‐Si and Cu‐Ge

3. Interfacial reactions of ultrahigh‐vacuum‐deposited Cu thin films on atomically cleaned (111)Si. I. Phase formation and interface structure

4. Study on ta diffusion barrier in Al/Si system

5. Failure mechanism of Ta diffusion barrier between Cu and Si

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Initial stages of Lutetium growth on Si (111)-7 × 7 probed by STM and core-level photoelectron spectroscopy;Surface Science;2017-09

2. Tantalum induced butterfly-like clusters on Si (111)-7×7 surface: STM/STS study at low coverage;Surface Science;2012-02

3. High resolution photoemission study of the formation and thermal stability of Mg silicide on silicon;Thin Solid Films;2011-01

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