Influence of substrate domain boundaries on surface reconstructions of Ga/Si(111)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference23 articles.
1. Scanning tunneling microscopy study of low‐temperature epitaxial growth of silicon on Si(111)‐(7×7)
2. Strained-layer growth and islanding of germanium on Si(111)-(7 × 7) studied with STM
3. Regular defects on the Si(111)-(7×7) surface studied by scanning tunneling microscopy
4. Structural analysis of domain boundaries on Si(111)7×7 surfaces by scanning tunneling microscope
5. A scanning tunneling microscope for surface science studies
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1. Decoration of domain boundaries: group IV elements and IV–IV compounds: Si (111) (decoration by elemental metals and semiconductors);Physics of Solid Surfaces;2018
2. STM study of the Ga thin films grown on Si(111) surface;Surface Science;2017-09
3. Ga and In adsorption on Si(112): Adsorption sites and superstructure;Physical Review B;2017-03-31
4. Modification of Schottky barrier height on Si (111) by Ga-termination;Surface Science;2013-04
5. Random and ordered arrays of surface magic clusters;International Reviews in Physical Chemistry;2008-04
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