Preparation of clean surfaces and Se vacancy formation in Bi 2 Se 3 by ion bombardment and annealing
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference35 articles.
1. p-typeBi2Se3for topological insulator and low-temperature thermoelectric applications
2. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface
3. Observation of a large-gap topological-insulator class with a single Dirac cone on the surface
4. Topological insulators and superconductors
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