Temperature-dependent energy thresholds for ion-stimulated defect formation in solids: Effects of ion mass and adsorbate–substrate pairing-Reference-Cited by-同舟云学术

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Temperature-dependent energy thresholds for ion-stimulated defect formation in solids: Effects of ion mass and adsorbate–substrate pairing

Published:2007-06 Issue:12 Volume:601 Page:2453-2458
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Wang Zhengguang,Seebauer Edmund G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference32 articles.

1. Effect of implant temperature on secondary defects created by MeV Sn implantation in silicon

2. Low-Temperature Microwave Plasma Etching of Crystalline Silicon

3. Low-temperature plasma etching of GaAs, AlGaAs, and AlAs

4. Formation of Anomalous Defect Structure on GaSb Surface by Low Temperature Sn Ion-Implantation

5. Ion implantation damage in Al0.6Ga0.4As/GaAs heterostructures

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1. Ion Beam Deposition and Cleaning;Low-Energy Ion Irradiation of Materials;2022

2. (Invited) Defect Engineering at the Nanoscale: Challenges and Trends;ECS Transactions;2013-03-15

3. Trends in semiconductor defect engineering at the nanoscale;Materials Science and Engineering: R: Reports;2010-11

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