Study of porous III–V semiconductors by electron spectroscopies (AES and XPS) and optical spectroscopy (PL): Effect of ionic bombardment and nitridation process-Reference-Cited by-同舟云学术

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Study of porous III–V semiconductors by electron spectroscopies (AES and XPS) and optical spectroscopy (PL): Effect of ionic bombardment and nitridation process

Published:2007-09 Issue:18 Volume:601 Page:4531-4535
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Ben Khalifa S.,Gruzza B.,Robert-Goumet C.,Bideux L.,Monier G.,Saidi F.,M’Ghaieth R.,Hjiri M.,Hamila R.,Hassen F.,Maaref H.,Bremond G.,Bèji L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference18 articles.

1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

2. Porous silicon formation: A quantum wire effect

3. The structural and luminescence properties of porous silicon

4. Progress toward nanoscale silicon light emitters

5. Pores in III–V Semiconductors

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of the Impact of Crystalline Arsenolite Oxide Formations on Porous Gallium Arsenide;physica status solidi (a);2024-07-08

2. Insulated InP (100) semiconductor by nano nucleus generation in pure water;AIP Conference Proceedings;2018

3. Mesoporous GaAs double layers for layer transfer processes;physica status solidi (a);2009-07-27

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