Stability of In rows on Si(100) during STM observation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference16 articles.
1. STM tip-induced diffusion of In atoms on the Si(111)3×3-In surface
2. Growth of thallium overlayers on a Si(100) surface
3. Indium ad-dimer manipulation by an STM tip
4. Tl overlayers on Si(1 0 0) and their self-assembly induced by STM tip
5. Adsorption of Al on Si(100): A surface polymerization reaction
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1. An ab initio approach to anisotropic alloying into the Si(001) surface;Physical Chemistry Chemical Physics;2023
2. Analysis of Al adatoms random hopping on Si(100)-c(4 × 2) surface observed by STM at low temperature: Determination of the hopping barriers;Surface Science;2022-06
3. Anisotropic alloying: Formation of atomic scale trellis on the Si(100)-(2 × 1) surface;Surface Science;2018-11
4. Analysis of the Sn chain length fluctuations on Si(100) 2×1 : An extraction of microscopic parameters;Physical Review B;2017-07-24
5. Dynamic scaling of island size distribution in submonolayer one-dimensional growth;Physical Review E;2017-04-14
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