Anisotropic alloying: Formation of atomic scale trellis on the Si(100)-(2 × 1) surface
Author:
Funder
Czech Science Foundation
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference21 articles.
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3. Emergence of state at Fermi level due to the formation of In-Sn heterodimers on Si(100)-21;Sobotík;Phys. Rev. B – Condensed Matter Mater. Phys.,2013
4. Gallium growth and reconstruction on the Si(100) surface;Baski;J. Vac. Sci. Technol. A,1990
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