Initial sticking probability of O2 on Cu(410)-Reference-Cited by-同舟云学术

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Initial sticking probability of O2 on Cu(410)

Published:2008-08 Issue:15 Volume:602 Page:2689-2692
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Vattuone Luca,Savio Letizia,Okada Michio,Moritani Kousuke,Rocca Mario

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference27 articles.

1. Activated dissociation via a trapping precursor: O2/Cu(001)-(2√×√)-O

2. Oxygen surface diffusion in three-dimensional Cu2O growth on Cu(001) thin films

3. Actively controlled oxidation of Cu{100} with hyperthermal O2 molecular beam

4. Activated dissociation of oxygen on Cu(110)

5. Dissociative chemisorption of O2 on Cu(110)

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Normal and off-normal incidence dissociative dynamics of O2(v,J) on ultrathin Cu films grown on Ru(0001);Physical Chemistry Chemical Physics;2021

2. THEORETICAL INVESTIGATION OF O2 AND H2O CO-ADSORPTION ON CumCon(m+n=2∼7) CLUSTERS;Surface Review and Letters;2019-10-17

3. Oxygen and sulfur adsorption on vicinal surfaces of copper and silver: Preferred adsorption sites;The Journal of Chemical Physics;2018-03-28

4. Poisoning and non-poisoning oxygen on Cu(410);Journal of Physics: Condensed Matter;2011-11-16

5. NO chemisorption dynamics on thick FePc and ttbu-FePc films;The Journal of Chemical Physics;2009-05-07

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