Ge growth on ion-irradiated Si self-affine fractal surfaces

Author:

Goswami D.K.,Bhattacharjee K.,Dev B.N.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Fractal and multifractal characteristics of swift heavy ion induced self-affine nanostructured BaF2 thin film surfaces;Chaos: An Interdisciplinary Journal of Nonlinear Science;2015-08

2. Uniformity of epitaxial nanostructures of CoSi2 via defect control of the Si (111) surface;Thin Solid Films;2013-05

3. Ge growth on self-affine fractal Si surfaces: influence of surface roughness;Journal of Physics D: Applied Physics;2009-06-26

4. Surface roughness of ion-bombarded Si(100) surfaces: Roughening and smoothing with the same roughness exponent;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-04

5. Nanoscale self-affine surface smoothing by ion bombardment and the morphology of nanostructures grown on ion-bombarded surfaces;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-04

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