Uniformity of epitaxial nanostructures of CoSi2 via defect control of the Si (111) surface-Reference-Cited by-同舟云学术

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Uniformity of epitaxial nanostructures of CoSi2 via defect control of the Si (111) surface

Published:2013-05 Issue: Volume:534 Page:296-300
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Mahato J.C.,Das Debolina,Roy Anupam,Batabyal R.,Juluri R.R.,Satyam P.V.,Dev B.N.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Engineering atomic and molecular nanostructures at surfaces

2. Electron lithography for the fabrication of microelectronic devices

3. Self-organized growth of nanostructure arrays on strain-relief patterns

4. Nanodot to nanowire: A strain-driven shape transition in self-organized endotaxial CoSi2 on Si(100)

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sequential growth of self-organized epitaxial FeSi2 and CoSi2 nanostructures on Si(1 1 1)-7 × 7 surfaces;Applied Surface Science;2022-01

2. Silicon nanodots via sputtering of Si(111)-7×7 surfaces and post-annealing;Materials Today: Proceedings;2021

3. Tuning the length/width aspect ratio of epitaxial unidirectional silicide nanowires on Si(110)-16 × 2 surfaces;Nano Express;2020-09-01

4. Step-edge guided growth of nanowires on three-fold symmetric vicinal Si(111) surfaces;Bulletin of Materials Science;2020-02-26

5. Ag-induced √3 reconstruction on Si(111)/Ge-(5 × 5) and the surfactant behavior of Ag in further growth of Ge;Applied Surface Science;2015-11

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