2 K photoluminescence of indirect GAP AlxGa1−xAs alloys grown under near-equilibrium conditions by LPE-Reference-Cited by-同舟云学术

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2 K photoluminescence of indirect GAP AlxGa1−xAs alloys grown under near-equilibrium conditions by LPE

Published:1998-05 Issue:2 Volume:10 Page:137-142
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Martı́nez-Criado G,Purón-Sopeña E,Almeida-Garcı́a J,Riech I,Serra-Jones A

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy

Reference18 articles.

1. Structure and device characteristics of solar cells

2. Localized system with a mobility edge in epitaxial compensated AlxGa1−xAs

3. Liquid phase epitaxy

4. Photoluminescence Characterization of the Crystalline Quality in Intrinsic GaAs Epitaxial Layers

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