Liquid phase epitaxy

Author:

Kuphal E.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Reference135 articles.

1. H. Nelson: Epitaxial growth from the liquid state and its application to the fabrication of tunnel and laser diodes. RCA Rev. 24, 603 (1963)

2. M.B. Panish, I. Hayashi, S. Sumski: Double-heterostructure injection lasers with room-temperature thresholds as low as 2300 A/cm2. Appl. Phys. Lett. 16, 326 (1970)

3. Zh.I. Alferov, V.M. Andreev, D.Z. Garbuzov, Yu.V. Zhilyaev, E.P. Morozov, E.L. Portnoi, V.G. Trofim: Investigation of the influence of the AlAs-GaAs heterostructure parameters on the laser threshold current and the realization of continuous emission at room temperature. Sov. Phys. Semicond. 4, 1573 (1971)

4. J.J. Hsieh, J.A. Rossi, J.P. Donelly: Room-temperature cw operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 ?m. Appl. Phys. Lett. 28, 709 (1976)

5. R.E. Nahory, M.A. Pollack, E.D. Beebe, J.C. DeWinter, R.W. Dixon: Continuous operation of 1.0-?m-wavelength GaAsSb/AlGaAsSb double-heterostructure injection lasers at room temperature. Appl. Phys. Lett. 28, 19 (1976)

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