Improvement of 1.54 μm luminescence in erbium-doped a-SiOx:H alloys-Reference-Cited by-同舟云学术

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Improvement of 1.54 μm luminescence in erbium-doped a-SiOx:H alloys

Published:2002-04 Issue: Volume:299-302 Page:699-703
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Terukov E.I,Undalov Yu.K,Kudoyarova V.Kh,Koughia K.V,Kleider J.P,Gueunier M.E,Meaudre R

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Stimulated emission in erbium-doped silicon structures under optical pumping

2. Electrical and optical properties of a-Si:H, a-SiGe:H and a-SiSn:H deposited by magnetron assisted silane decomposition

3. Erbium luminescence in doped amorphous silicon

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comprehensive study of the conditions for obtaining hydrogenated amorphous erbium- and oxygen-doped silicon suboxide films, a-SiO x :H 〈Er,O〉, by dc-magnetron deposition;Semiconductors;2011-12

2. The effect of erbium and oxygen on the photoluminescence intensity of erbium and the composition of a-SiOx:(H, Er, O) films deposited by DC magnetron sputtering;Semiconductors;2005-08

3. Enhancement of Er3+Luminescence from Er-doped Hydrogenated Amorphous Silicon by Carbon Co-doping;Japanese Journal of Applied Physics;2004-02-10

4. Temperature independent Er3+ photoluminescence lifetime in a-Si:H and a-SiOx:H;Materials Science and Engineering: B;2003-12

5. Photoluminescence ofEr3+-implanted amorphous hydrogenated silicon suboxides;Physical Review B;2003-10-28

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