The effect of erbium and oxygen on the photoluminescence intensity of erbium and the composition of a-SiOx:(H, Er, O) films deposited by DC magnetron sputtering-Reference-Cited by-同舟云学术

The effect of erbium and oxygen on the photoluminescence intensity of erbium and the composition of a-SiOx:(H, Er, O) films deposited by DC magnetron sputtering

Published:2005-08 Issue:8 Volume:39 Page:944-950
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Undalov Yu. K.,Terukov E. I.,Gusev O. B.,Kudoyarova V. Kh.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.2010690.pdf

Reference12 articles.

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2. C. Piamonteze, A. C. Iniguez, L. R. Tessler, et al., Phys. Rev. Lett. 81, 4652 (1998).

3. L. R. Tessler and A. C. Iniguez, J. Non-Cryst. Solids 266–269, 603 (2000).

4. Yu. K. Undalov, E. I. Terukov, O. B. Gusev, and V. Kh. Kudoyarova, Fiz. Tekh. Poluprovodn. (St. Petersburg) 37, 853 (2003) [Semiconductors 37, 825 (2003)].

5. J. Michel, F. Y. G. Ren, B. Zheng, et al., Mater. Sci. Forum 143–147, 707 (1994).

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1. Effect of electric field in the course of obtaining a-SiO x :H(Er, O) films by dc magnetron sputtering on their composition and photoluminescence intensity of erbium ions;Semiconductors;2008-11

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