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2. Pb1 defect study and chemical characterization of the Si(001)SiO2 interface in oxidized porous silicon
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5. For hν=1254 eV (MgKα), the photoelectron escape depth in the Si bulk is about 2 nm [R. Flitsch, S.I. Raider, J. Vac. Sci. Technol. 12 (1975) 305]