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Properties of stacked dielectric films composed of SiO2/Si3N4/SiO2

  • Published:1999-04 Issue:1-3 Volume:245 Page:224-231
  • ISSN:0022-3093
  • Container-title:Journal of Non-Crystalline Solids
  • language:en
  • Short-container-title:Journal of Non-Crystalline Solids

Author:

Santucci S.,Lozzi L.,Passacantando M.,Phani A.R.,Palumbo E.,Bracchitta G.,De Tommasis R.,Torsi A.,Alfonsetti R.,Moccia G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Field-dependent charge trapping analysis of ONO inter-poly dielectrics for NAND flash memory applications;Solid-State Electronics;2014-04

2. Characteristics of SiO2/Si3N4/SiO2 Stacked-Gate Dielectrics Obtained via Atomic-Layer Deposition;Journal of Nanoscience and Nanotechnology;2011-07-01

3. Atomic-Resolution Study of β-Si3N4/SiO2 Interfaces;Atomic Scale Characterization and First-Principles Studies of Si₃N₄ Interfaces;2011

4. Silicon Nitride Ceramics;Atomic Scale Characterization and First-Principles Studies of Si₃N₄ Interfaces;2011

5. Infrared interference coating by use of Si_3N_4 and SiO_2 films with ion-assisted deposition;Applied Optics;2010-01-15
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