Transport properties of bulk amorphous semiconductor Al32Ge68-Reference-Cited by-同舟云学术

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Transport properties of bulk amorphous semiconductor Al32Ge68

Published:2001-08 Issue:1-3 Volume:289 Page:30-36
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Kolyubakin A.I.,Antonov V.E.,Barkalov O.I.,Gurov A.F.,Harkunov A.I.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Pressure-induced amorphous phases

2. Pressure—induced amorphous phases

3. Electric properties of bulk amorphous semiconductor Zn41Sb59

4. ZnSb and GaSb Bulk Amorphous Semiconductors: Transport Properties

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Features in low-temperature electrical resistivity of amorphous Cd3As2 films due to hopping conductivity with changing activation energy;Journal of Non-Crystalline Solids;2021-12

2. A quasi-zero-gap semiconductor at high pressures as a model of amorphous semiconductor;Russian Physics Journal;2008-07

3. High-pressure behavior of CdSb: Compound decomposition, phase formation, and amorphization;Physical Review B;2006-06-09

4. Electrical properties of bulk amorphous semiconductor (GaSb)38Ge24;Journal of Non-Crystalline Solids;2005-11

5. CdTe semiconductor nanowires and NiFe ferro-magnetic metal nanowires electrodeposited into cylindrical nano-pores on the surface of anodized aluminum;Journal of Applied Electrochemistry;2005-05

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