A quasi-zero-gap semiconductor at high pressures as a model of amorphous semiconductor-Reference-Cited by-同舟云学术

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A quasi-zero-gap semiconductor at high pressures as a model of amorphous semiconductor

Published:2008-07 Issue:7 Volume:51 Page:680-685
ISSN:1064-8887
Container-title:Russian Physics Journal
language:en
Short-container-title:Russ Phys J

Author:

Daunov M. I.,Kamilov I. K.,Gabibov S. F.,Magomedov A. B.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/s11182-008-9094-2.pdf

Reference22 articles.

1. B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors [in Russian], Nauka, Moscow, 1979.

2. A. R. Gadzhiev, S. M. Ryvkin, and I. S. Shlimak, Pisma Zh. Tekh. Fiz., 15, 605 (1972).

3. S. M. Ryvkin and I. S. Shlimak, Phys. Stat. Sol. (a), 16, 515 (1973).

4. M. I. Daunov, I. K. Kamilov, V. A. Elizarov, et al., Doklady RAN, 357, 612 (1997).

5. A. I. Kolyubakin, V. E. Antonov, O. L. Barkalov, et al, J. Non-Crystalline Solids, 289, 30 (2001).

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