Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy-Reference-Cited by-同舟云学术

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Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy

Published:2002-05 Issue:1 Volume:303 Page:83-87
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Nohira H.,Tsai W.,Besling W.,Young E.,Petry J.,Conard T.,Vandervorst W.,De Gendt S.,Heyns M.,Maes J.,Tuominen M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Semiconductor Industry Association, International Technology Roadmap for Semiconductors, 2000 Edition. http://public.itrs.net/

2. Electrical characteristics of ZrO2-based metal-insulator-semiconductor structures on p-Si

3. Hafnium and zirconium silicates for advanced gate dielectrics

4. Understanding the limits of ultrathin SiO2 and SiON gate dielectrics for sub-50 nm CMOS

5. Outlook of MOS devices into next century

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