Excess carrier dispersion in conventionally dispersive amorphous semiconductors and the mobility-lifetime anomaly in a-Si:H
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Mobility–lifetime estimates in amorphous hydrogenated silicon (a-Si:H)
2. A-Si:H drift mobility - study of isotropy
3. Transient and steady-state photoconductivity in a-Si1−xGex:H,F alloys
4. Solution of the μτ problem in a-Si: H
5. Time-of-flight photoconductivity in a-Si:H
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The Study of Space Charge Effects by Spectral Response, Steady State Charge Collection and Transient Photocurrents in Thick a-Si:H Pin-Diodes;MRS Proceedings;1996
2. Estimation of the Mobility-Lifetime Products in Amorphous Silicon in the Presence of Dispersive Transport;Japanese Journal of Applied Physics;1994-12-01
3. Deep trapping and recombination in hydrogenated amorphous silicon;Philosophical Magazine B;1994-02
4. Effect of carrier-injection width on the time-of-flight measurement;Solid State Communications;1993-10
5. An adiabatic model of dispersive hopping transport. I. General results for weak-field drift and diffusion;Philosophical Magazine B;1993-10
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