Deep trapping and recombination in hydrogenated amorphous silicon
Author:
Affiliation:
1. a Department of Chemistry , University of Cambridge , Lensfield Road, Cambridge , CB2 IEW , England
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/01418639408240099
Reference22 articles.
1. Unraveling the μτ-mystery in a-Si:H
2. Chapter 8 Photoconductivity
3. Mobility‐lifetime products in hydrogenated amorphous silicon
4. Solution of the μτ problem in a-Si: H
5. A-Si:H drift mobility - study of isotropy
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2. A new concept of monolithic silicon pixel detectors: hydrogenated amorphous silicon on ASIC;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2004-02
3. Defect characterization of a-SiC:H and a-SiN:H alloys produced by ultrahigh vacuum plasma enhanced chemical vapor deposition in different plasma conditions;Physica B: Condensed Matter;1998-11
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5. Optoelectronic properties, structure and composition of a-SiC:H films grown in undiluted and H2 diluted silane-methane plasma;Journal of Applied Physics;1997-06-15
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