Infrared spectroscopy during hydrogen effusion of a-Si:H, a-SiGe:H and a-Ge:H
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Tetrahedrally-Bonded Amorphous Semiconductors;Beyer,1985
2. W. Beyer, H.C. Weller and U. Zastrow, these proceedings.
3. Hydrogen evolution and defect creation in amorphous Si: H alloys
4. Infrared Spectrum and Structure of Hydrogenated Amorphous Silicon
5. Matrix controlled equilibrium between the various H sites in annealed sputtered a-Si:H
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1. Optical and Electronic Characterization of a-SiGe:H Thin Films Prepared by a Novel Hollow Cathode Deposition Technique;MRS Proceedings;2004
2. ArF-excimer laser induced chemical vapour deposition of amorphous hydrogenated SiGeC films;Applied Surface Science;2003-03
3. Analysis of hydrogen and paramagnetic defects in aSi: H aerosol particles. Resulting from thermal decomposition of silane;physica status solidi (b);1996-01-01
4. Bond switching, Si-H cluster formation and hydrogen effusion upon thermal annealing in hydrogenated amorphous silicon thin films;Thin Solid Films;1995-12
5. Influence of deposition parameters on defect formation in a-SiGe:H alloys;Philosophical Magazine B;1995-05
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