Luminescence and absorption edge of a-Ge:H well layers in a-Si:H/a-Ge:H multilayers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. Structural and optical properties of a-Si:H/a-Ge:H multilayers
2. Luminescence and recombination in hydrogenated amorphous silicon
3. Excitation and recombination process in porous silicon
4. N.F. Mott, E.A. Davis, Electronic Processes in Non-Crystalline Materials, second ed., Clarendon, 1979, p. 279
5. Fundamental absorption edge spectrum of ultrathin a-Si : H film in multilayer obtained from luminescence excitation spectrum
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