Investigation of irradiation effect on npn BJT electrical properties

Author:

Assaf J.

Publisher

Elsevier BV

Subject

Radiation

Reference11 articles.

1. Radiation effect on silicon transistors in mixed neutrons–gamma environment;Assaf;Radiat. Phys. Chem.,2014

2. Effects of ionizing radiation on BiCMOS components for space applications;Colder;Nucl. Instrum. Methods Phys. Res. B,2001

3. The effect of 8MeV electrons on 2 N2907A pnp transistors;D' Souzal;Int. J. Sci. Environ. Technol.,2012

4. Total dose effects in conventional bipolar transistors and linear integrated circuits;Johnston;IEEE Trans. Nucl. Sci.,1994

5. Boron ions interaction with pnp bipolar power transistor and displacement damage effects on its electrical characteristics;Krishankumar;Procedia Mater. Sci.,2014

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1. Characterizing the Radiation Degradation of Metal Can Packaged Bipolar Transistor*;2023 24th International Conference on Electronic Packaging Technology (ICEPT);2023-08-08

2. Effect of H2 on interface traps in the LPNP transistors caused by 3 MeV proton irradiations;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2020-01

3. Modeling and analysis for the effects of gamma irradiation on the DC and AC performance in InGaP/GaAs SHBTs;Radiation Effects and Defects in Solids;2019-11-05

4. Experimental studies of collector-emitter voltage bias influence on the total ionization dose effects in NPN Si BJTs;Superlattices and Microstructures;2018-10

5. Investigation of total dose effects in SiGe HBTs under different exposure conditions;Radiation Physics and Chemistry;2018-10

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