Impact of 0.9 MeV electron irradiation on main properties of high voltage vertical power 4H-SiC MOSFETs
Author:
Funder
Ioffe Institute
RSF
Publisher
Elsevier BV
Subject
Radiation
Reference23 articles.
1. Gamma irradiation effects on 4H-SiC MOS capacitors and MOSFETs;Ahyi;Mater. Sci. Forum,2006
2. Radiation effects in commercial 1200 V 24 A silicon carbide power MOSFETs;Akturk;IEEE Trans. Nucl. Sci.,2012
3. Investigation of sensitivity and threshold voltage shift of commercial MOSFETs in gamma irradiation”;Ashrafi;Nucl. Sci. Tech.,2016
4. Radiation Effects in Solids;Dienes,1957
5. Effects of neutron irradiation on the static and switching characteristics of high-voltage 4H-SiC p-type gate turn-off thyristors;Dong;IEEE Trans. Electron. Dev.,2019
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