Author:
Ridgway M.C.,Azevedo G.de M.,Glover C.J.,Yu K.M.,Foran G.J.
Subject
Instrumentation,Nuclear and High Energy Physics
Reference11 articles.
1. M.C. Ridgway, C.J. Glover, C.M. Johnson, K.M. Yu, G.J. Foran, Appl. Phys. Lett., submitted for publication
2. Characterization of the local structure of amorphous GaAs produced by ion implantation
3. G. de M. Azevedo, M.C. Ridgway, C.J. Glover, K.M. Yu, G.J. Foran, Nucl. Instr. and Meth. B 190 (2002) 851
4. Ion-dose-dependent microstructure in amorphous Ge
5. Ab initiomolecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium
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