Lattice relaxation around impurity atoms in semiconductors – arsenic in silicon – a comparison between experiment and theory
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference16 articles.
1. Lattice distortions for arsenic in single-crystal silicon
2. Local structures of isovalent and heterovalent dilute impurities in Si crystal probed by fluorescence x-ray absorption fine structure
3. Lattice relaxation around substitutional defects in semiconductors
4. A. Settels, Diss. RWTH Aachen 2000, Berichte des FZ Jülich, Jül-3731
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