Surface processes in ion-induced etching
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference22 articles.
1. Ion‐ and electron‐assisted gas‐surface chemistry—An important effect in plasma etching
2. Ion-enhanced gas-surface chemistry: The influence of the mass of the incident ion
3. Chemical sputtering of fluorinated silicon
4. Surface studies of and a mass balance model for Ar+ ion-assisted Cl2 etching of Si
5. Surface modification in plasma-assisted etching of silicon
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1. Etching of SiO2 and Si in fluorocarbon plasmas: A detailed surface model accounting for etching and deposition;Journal of Applied Physics;2000-11-15
2. Energy distributions of copper ions and atoms sputtered by atomic and molecular ions;Journal of Physics D: Applied Physics;1997-09-07
3. Sputtering of compound semiconductor surfaces. I. Ion-solid interactions and sputtering yields;Critical Reviews in Solid State and Materials Sciences;1994-01
4. Comparison of Cl2 and HCl adsorption on Si(100)−(2 × 1);Thin Solid Films;1993-03
5. Surface science aspects of etching reactions;Surface Science Reports;1992-01
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