Molecular dynamics simulations for amorphous/crystalline Si interface: Amorphization and crystallization induced by simple defects
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference11 articles.
1. Proportionality between ion-beam-induced epitaxial regrowth in silicon and nuclear energy deposition
2. Ion-beam-induced epitaxial crystallization and amorphization in silicon
3. Divacancy control of the balance between ion-beam-induced epitaxial cyrstallization and amorphization in silicon
4. A defect model for ion-induced crystallization and amorphization
5. Evidence for diffusion-limited kinetics of ion-beam-induced epitaxial crystallization in silicon
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