Improved lifetime characteristics in heavy ion irradiated silicon

Author:

Keskitalo Niclas,Hallén Anders,Josyula Lalita,Svensson Bengt G.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Surface profile of minority carrier lifetime in 65 and 100 MeV fluorine ion irradiated n-Si (111);Radiation Physics and Chemistry;2017-01

2. Neon implantation and the radiation enhanced diffusion of platinum for the local lifetime control in high-power silicon diodes;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2009-09

3. Physical understanding and technological control of carrier lifetimes in semiconductor materials and devices: A critique of conceptual development, state of the art and applications;Progress in Quantum Electronics;2005-01

4. Swift heavy-ion irradiation effects on electrical and defect properties of NPN transistors;Semiconductor Science and Technology;2004-07-08

5. High-energy ion implantation of iron in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-12

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